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| STU/D320S S a mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS 30V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. TO-252 and TO-251 Package. ID 30A RDS(ON) (m) Max 20 @ VGS=10V 29 @ VGS=4.5V ESD Protected. D D G S G D G S STU SERIES TO-252AA(D-PAK) STD SERIES TO-251(l-PAK) S ABSOLUTE Symbol VDS VGS ID IDM EAS PD TJ, TSTG MAXIMUM RATINGS ( T C=25 C unless otherwise noted ) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed Avalanche Energy d b a Limit 30 20 30 24 120 15 e Units V V A A A mJ W W C TC=25 C TC=70 C Maximum Power Dissipation a TC=25 C TC=70 C 32 20 -55 to 150 Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JC R JA Thermal Resistance, Junction-to-Case a Thermal Resistance, Junction-to-Ambient a 4 50 C/W C/W Aug,11,2008 1 www.samhop.com.tw STU/D320S Ver 1.0 ELECTRICAL CHARACTERISTICS ( TC=25 C unless otherwise noted ) Symbol Parameter Conditions VGS=0V , ID=250uA VDS=24V , VGS=0V Min 30 Typ Max Units V OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body leakage current IGSS ON CHARACTERISTICS VGS(th) Gate Threshold Voltage RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance c VGS= 20V , VDS=0V 1 10 3 20 29 A uA VDS=VGS , ID=250uA VGS=10V , ID=15A VGS=4.5V , ID=12.5A VDS=10V , ID=15A 1 1.8 16 22 12 430 140 88 8 13 16 30 8 4 0.9 2.5 V m ohm m ohm S pF pF pF ns ns ns ns nC nC nC nC DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On DelayTime tr Rise Time tD(OFF) Turn-Off DelayTime tf Fall Time Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge c VDS=15V,VGS=0V f=1.0MHz VDD=15V ID=1A VGS=10V RGEN=6 ohm VDS=15V,ID=15A,VGS=10V VDS=15V,ID=15A,VGS=4.5V VDS=15V,ID=15A, VGS=10V DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Maximum Continuous Drain-Source Diode Forward Current IS Diode Forward Voltage b VSD VGS=0V,IS=2.2A 0.8 2.2 1.3 A V Notes _ a.Surface Mounted on FR4 Board,t<10 sec. _ _ b.Pulse Test:Pulse Width < 300us, Duty Ctcle < 2%. c.Guaranteed by design, not subject to production testing. d.Starting TJ=25C,L=0.5mH,RG=25,VDD=30V,VGS=10V .(See Figure13) e.Package current limitation is 20A. Aug,11,2008 2 www.samhop.com.tw STU/D320S Ver 1.0 40 V 10V GS= V 4. 5V GS= 20 ID, Drain Current(A) ID, Drain Current(A) 32 V 5V GS= V 4V GS= 16 24 V 3. 5V GS= 16 V 3V GS= 12 8 Tj= 125C 4 0 -55C 25C 8 0 0 0. 5 1 1. 5 2 2. 5 3 0 0. 7 1. 4 2. 1 2. 8 3. 5 4. 2 VDS, Drain-to-Source Voltage(V) VGS, Gate-to-Source Voltage(V) Figure 1. Output Characteristics 60 50 Figure 2. Transfer Characteristics 2.0 1.8 1.6 1.4 1.2 1.0 0.0 V G S =4.5V ID=12.5A V G S =10V ID=15A RDS(on)(m ) 40 30 20 10 1 V 10V GS= V 4. 5V GS= RDS(on), On-Resistance Normalized 1 8 16 24 32 40 0 25 50 75 100 125 150 T j ( C ) ID, Drain Current(A) Tj, Junction Temperature( C ) Figure 3. On-Resistance vs. Drain Current and Gate Voltage 1.3 Figure 4. On-Resistance Variation with Drain Current and Temperature BVDSS, Normalized Drain-Source Breakdown Voltage 1.15 ID= 250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 Vth, Normalized Gate-Source Threshold Voltage 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 VV DS= GS ID= 250uA 100 125 150 Tj, Junction Temperature( C ) Tj, Junction Temperature( C ) Figure 5. Gate Threshold Variation with Temperature 3 Figure 6. Breakdown Voltage Variation with Temperature Aug,11,2008 www.samhop.com.tw STU/D320S Ver 1.0 60 50 20. 0 Is, Source-drain current(A) ID= 15A 10. 0 RDS(on)(m ) 40 75C 30 20 25C 10 0 125C 25C 125C 75C 0 2 4 6 8 10 1. 0 0. 4 0. 6 0. 8 1. 0 1. 2 1. 4 VGS, Gate-to-Source Voltage(V) VSD, Body Diode Forward Voltage(V) Figure 7. On-Resistance vs. Gate-Source Voltage 600 Figure 8. Body Diode Forward Voltage Variation with Source Current 10 VGS, Gate to Source Voltage(V) 500 C, Capacitance(pF) 8 6 4 2 0 0 C iss 400 300 200 100 0 VDS=15V ID=15A C ss o C rss 0 5 10 15 20 25 30 1 2 3 4 5 6 7 8 9 VDS, Drain-to-Source Voltage(V) Qg, Total Gate Charge(nC) Figure 9. Capacitance Figure 10. Gate Charge 600 500 ID, Drain Current(A) Switching Time(ns) 100 60 TD( of f ) 100 R DS Tr TD( on) Tf ( ) ON L im it 1m 10 0u s 10 VD 15V, I D 1A S= = VG 10V S= 10 VGS =10V S ingle P ulse T A=25 C 1 10 m DC s s 1 1 6 10 60 100 300 600 1 0.1 10 30 100 Rg, Gate Resistance() VDS, Drain-Source Voltage(V) Figure 11. switching characteristics Figure 12. Maximum Safe Operating Area Aug,11,2008 4 www.samhop.com.tw STU/D320S Ver 1.0 15V V ( BR )D S S tp VDS L D R IVE R RG 20V D .U .T IA S tp + - VD D A 0.0 1 IAS Unclamped Inductive Test Circuit F igure 13a. Unclamped Inductive Waveforms F igure 13b. 2 1 D=0.5 Normalized Transient Thermal Resistance 0.2 0.1 0.1 P DM 0.05 t1 0.02 0.01 S ING LE P ULS E 0.01 10 -5 -4 -3 -2 -1 t2 1. 2. 3. 4. 10 10 10 R J A (t)=r (t) * R J A R J A=S ee Datas heet T J M-T A = P DM* R J A (t) Duty C ycle, D=t1/t2 1 10 10 Square Wave Pulse Duration(sec) Figure 14. Normalized Thermal Transient Impedance Curve Aug,11,2008 5 www.samhop.com.tw STU/D320S Ver 1.0 PACKAGE OUTLINE DIMENSIONS TO-251 Aug,11,2008 6 www.samhop.com.tw STU/D320S Ver 1.0 E b3 L3 TO-252 A C2 E1 D H b2 L4 e b L2 L L1 A1 C2 b b2 b3 L2 A1 L4 L L1 L3 10 483 0.814 864 232 0.508 6.000 6.400 4.902 2.290 9.601 0.010 0.066 1.397 2.743 1.100 387 0.584 0.889 1.092 436 REF. 00 6.604 5.004 BSC 210 0.127 0.940 1.651 REF. REF. 7 0.019 32 4 6 0.020 36 0.193 0.090 78 0.0004 0.026 0.055 0.108 0.043 4 0.023 0.035 43 4 REF. 4 0.197 BSC 402 0.005 0.037 0.065 REF. REF. Aug,11,2008 7 www.samhop.com.tw STU/D320S Ver 1.0 TO-251 Tube/TO-252 Tape and Reel Data TO-251 Tube 540 + 1.5 2~ 3.0 4.5 5.25 1.65 1.4 2.25 6.60 0.4 7.50 1.25 1.90 " A" 5.5 19.75 TO-252 Carrier Tape T D1 P2 P1 E1 E2 E B0 K0 UNIT: PACKAGE TO-252 (16 A0 6.96 0.1 A0 FEED DIRECTION D0 P0 B0 10.49 0.1 K0 2.79 0.1 D0 2 D1 1.5 + 0.1 -0 E 16.0 0.3 E1 1.75 0.1 E2 7.5 0.15 P0 8.0 0.1 P1 4.0 0.1 P2 2.0 0.15 T 0.3 0.05 TO-252 Reel T S V R M N G H W UNIT: TAPE SIZE 16 REEL SIZE 330 M 330 0.5 N 97 1.0 W 17.0 + 1.5 -0 T 2.2 H 13.0 + 0.5 - 0.2 K 10.6 S 2.0 0.5 G R K V Aug,11,2008 8 www.samhop.com.tw |
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